Including spatial correlations of channel length and threshold voltage variation in circuit simulations
- Josef Watts
- Henry Trombley
- 2012
- Microelectronics Reliability
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44 results at Microelectronics Reliability
Thermal fracture toughness measurement for underfill during temperature change
- Soojae Park
- Claudius Feger
- 2011
- Microelectronics Reliability
Reliability of advanced high-k/metal-gate n-FET devices
- J.H. Stathis
- M. Wang
- et al.
- 2010
- Microelectronics Reliability
Impacts of NBTI and PBTI on SRAM static/dynamic noise margins and cell failure probability
- Aditya Bansal
- Rahul Rao
- et al.
- 2009
- Microelectronics Reliability
The evolution of microstructure and microhardness of Sn-Ag and Sn-Cu solders during high temperature aging
- Sun-Kyoung Seo
- Sung K. Kang
- et al.
- 2009
- Microelectronics Reliability
A novel approach to characterization of progressive breakdown in high-k/metal gate stacks
- R. Pagano
- S. Lombardo
- et al.
- 2008
- Microelectronics Reliability
Organic substrates for flip-chip design: A thermo-mechanical model that accounts for heterogeneity and anisotropy
- L. Valdevit
- V.D. Khanna
- et al.
- 2008
- Microelectronics Reliability
Black's law revisited-Nucleation and growth in electromigration failure
- J.R. Lloyd
- 2007
- Microelectronics Reliability
Worn-out oxide MOSFET characteristics: Role of gate current and device parameters on a current mirror
- J. Martín-Martínez
- R. Rodríguez
- et al.
- 2007
- Microelectronics Reliability
Influence of the SiO2 layer thickness on the degradation of HfO2/SiO2 stacks subjected to static and dynamic stress conditions
- E. Amat
- R. Rodríguez
- et al.
- 2007
- Microelectronics Reliability