Depletion-Mode GaAs SISFET's By Selective Ion Implantation
- H. Baratte
- Paul M. Solomon
- et al.
- 1987
- IEEE Electron Device Letters
Paper
Publications
307 results at IEEE Electron Device Letters
Lateral Encroachment of Extrinsic-Base Dopant in Submicrometer Bipolar Transistors
- Pong-Fei Lu
- G.P. Li
- et al.
- 1987
- IEEE Electron Device Letters
PaperSymmetric-Gain, Zero-Offset, Self-Aligned, and Refractory-Contact Double HBT's
- Sandip Tiwari
- Steven L. Wright
- 1987
- IEEE Electron Device Letters
PaperElectrical Characteristics of Very Thin SiO2 Deposited at Low Substrate Temperatures
- J. Batey
- E. Tierney
- et al.
- 1987
- IEEE Electron Device Letters
PaperDesign Considerations of High-Performance Narrow-Emitter Bipolar Transistors
- Denny D. Tang
- Tze-Chiang Chen
- et al.
- 1987
- IEEE Electron Device Letters
PaperParasitic Bipolar Effects in Submicrometer GaAs MESFET's
- Bart J. van Zeghbroeck
- W. Patrick
- et al.
- 1987
- IEEE Electron Device Letters
PaperMONOLITHIC INTEGRATION OF A 3-GHZ DETECTOR/PREAMPLIFIER USING A REFRACTORY-GATE, ION-IMPLANTED MESFET PROCESS.
- D.L. Rogers
- 1986
- IEEE Electron Device Letters
PaperScaled GaAs MESFET's with gate length down to 100 nm
- Heinz Jaeckel
- Volker Graf
- et al.
- 1986
- IEEE Electron Device Letters
PaperSemi-Classical Calculation of Charge Distributions in Ultra-Narrow Inversion Lines
- Alan C. Warren
- Dimitri A. Antoniadis
- et al.
- 1986
- IEEE Electron Device Letters
PaperDevice-grade ultra-shallow junctions fabricated with antimony
- George A. Sai-Halasz
- H.B. Harrison
- 1986
- IEEE Electron Device Letters
Paper