Oxygen passivation of vacancy defects in metal-nitride gated HfO 2/SiO2/Si devices
- E. Cartier
- M. Hopstaken
- et al.
- 2009
- Applied Physics Letters
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Size-dependent modulation of carrier mobility in top-down fabricated silicon nanowires
- Lidija Sekaric
- Oki Gunawan
- et al.
- 2009
- Applied Physics Letters
Role of the electronic structure on the relationship between the crystallinity of CoFe and its tunneling magnetoresistance
- Li Gao
- Xin Jiang
- et al.
- 2009
- Applied Physics Letters
Method to measure the viscosity of nanometer liquid films from the surface fluctuations
- Zhaohui Yang
- Chi-Hang Lam
- et al.
- 2009
- Applied Physics Letters
Behavior of a chemically doped graphene junction
- Damon B. Farmer
- Yu-Ming Lin
- et al.
- 2009
- Applied Physics Letters
Influence of interfaces and doping on the crystallization temperature of Ge-Sb
- Simone Raoux
- Huai-Yu Cheng
- et al.
- 2009
- Applied Physics Letters
Tomographic study of atomic-scale redistribution of platinum during the silicidation of Ni0.95 Pt0.05 /Si (100) thin films
- Praneet Adusumilli
- Lincoln J. Lauhon
- et al.
- 2009
- Applied Physics Letters
Preamplifying cantilevers for dynamic atomic force microscopy
- Benedikt Zeyen
- Kumar Virwani
- et al.
- 2009
- Applied Physics Letters
Thermal conductivities and phase transition temperatures of various phase-change materials measured by the 3ω method
- W.P. Risk
- C.T. Rettner
- et al.
- 2009
- Applied Physics Letters
Pore orientation and silylation effects on mesoporous silica film properties
- A.P. Singh
- D.D. Gandhi
- et al.
- 2009
- Applied Physics Letters