J.Z. Sun, W.J. Gallagher, et al.
Applied Physics Letters
A three-terminal spin-torque-driven magnetic switch is experimentally demonstrated. The device uses nonlocal spin current and spin accumulation as the main mechanism for current-driven magnetic switching. It separates the current-induced write operation from that of a magnetic tunnel junction based read. The write current only passes through metallic structures, improving device reliability. The device structure makes efficient use of lithography capabilities, important for robust process integration. © 2009 American Institute of Physics.
J.Z. Sun, W.J. Gallagher, et al.
Applied Physics Letters
W. Chen, M.J. Rooks, et al.
Physical Review B - CMMP
J.Z. Sun, K.P. Roche, et al.
Materials Research Society Symposium - Proceedings
J.Z. Sun
Philos. Trans. R. Soc. A