Calculated spectral dependence of gain in excited gaAs
- Frank Stern
- 2008
- Journal of Applied Physics
Paper
Publications
2360 results at Journal of Applied Physics
Contact metallurgy for shallow junction Si devices
- C.J. Kircher
- 2008
- Journal of Applied Physics
PaperCapture of electrons into Na+-related trapping sites in the SiO2 layer of MOS structures at 77 °K
- D.J. DiMaria
- J.M. Aitken
- et al.
- 2008
- Journal of Applied Physics
PaperInfluence of the secondary electron emission coefficient of argon on Paschen breakdown curves in ac plasma panels for neon+0.1% argon mixture
- O. Sahni
- C. Lanza
- 2008
- Journal of Applied Physics
PaperDetection and origins of crystal defects in GaAs/GaAlAs LPE layers
- G.R. Woolhouse
- A.E. Blakeslee
- et al.
- 2008
- Journal of Applied Physics
PaperSimple analysis of torque measurement of magnetic thin films
- Hideki Miyajima
- Katsuo Sato
- et al.
- 2008
- Journal of Applied Physics
PaperElectron current injected into SiO2 from p-type Si depletion regions
- D.R. Young
- 2008
- Journal of Applied Physics
PaperA technique for measuring, displaying, recording, and modifying the spatial uniformity of implanted ions
- W.N. Hammer
- Alwin E. Michel
- 2008
- Journal of Applied Physics
PaperEffects of electron-beam irradiation on the properties of CVD Si 3N4 films in MNOS structures
- T.P. Ma
- B.H. Yun
- et al.
- 2008
- Journal of Applied Physics
PaperMagnetic, corrosion, and surface properties of Ni-Fe-Cr thin films
- D.W. Rice
- J.C. Suits
- et al.
- 2008
- Journal of Applied Physics
Paper