VA-6 Temperature-Dependent Properties of the Double HBJT
- S. Tiwari
- S.L. Wright
- et al.
- 1985
- IEEE T-ED
Paper
Publications
465 results at IEEE T-ED
Experimental Study of the Minority-Carrier Transport at the Polysilicon—Monosilicon Interface
- Arnost Neugroschel
- Maurizio Arienzo
- et al.
- 1985
- IEEE T-ED
PaperA General Control-Volume Formulation for Modeling Impact Ionization in Semiconductor Transport
- Steven E. Laux
- Bertrand M. Grossman
- 1985
- IEEE T-ED
PaperPerformance Limits of CMOS ULSI
- James R. Pfiester
- John D. Shott
- et al.
- 1985
- IEEE T-ED
PaperCorrelation Between the Diffusive and Electrical Barrier Properties of the Interface in Polysilicon Contacted n+-p Junctions
- Johannes M.C. Stork
- Maurizio Arienzo
- et al.
- 1985
- IEEE T-ED
PaperCorrelations of Photoluminescence with Defect Densities in Semi-Insulating Gallium Arsenide
- Harold J. Hovel
- D. Guidotti
- 1985
- IEEE T-ED
PaperIncreasing the Current Driving Capability of Epitaxial Schottky-Barrier Diodes Using High-Energy Implantation
- C.T. Chuang
- G.P. Li
- et al.
- 1985
- IEEE T-ED
PaperStability and SER Analysis of Static RAM Cells
- Barbara Chappell
- Stanley E. Schustfr
- et al.
- 1985
- IEEE T-ED
PaperVA-5 Pseudomorphic GaInAs/GaAs Single Quantum Well High Electron Mobility Transistor
- J.J. Rosenberg
- M. Benlamri
- et al.
- 1985
- IEEE T-ED
PaperProbing the Minority-Carrier Quasi-Fermi Level in Epitaxial Schottky-Barrier Diodes
- Lawrence F. Wagner
- C.T. Chuang
- 1985
- IEEE T-ED
Paper