Demonstration of a p-Channel BICFET in the GexSi1-x/Si System
- R.C. Taft
- James D. Plummer
- et al.
- 1989
- IEEE Electron Device Letters
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306 results at IEEE Electron Device Letters
Epitaxial base transistors with ultrahigh vacuum chemical vapor deposition (uhv/cvd) epitaxy: Enhanced profile control for greater flexibility in device design
- David L. Harame
- Johannes M.C. Stork
- et al.
- 1989
- IEEE Electron Device Letters
Modeling of Currents in a Vertical p-n-p Transistor with Extremely Shallow Emitter
- Mary Jo Saccamango
- Tze-Chiang Chen
- 1989
- IEEE Electron Device Letters
A Submicrometer High-Performance Bipolar Technology
- Tze-Chiang Chen
- Kai-Yap Toh
- et al.
- 1989
- IEEE Electron Device Letters
High-Gain Pseudomorphic InGaAs Base Ballistic Hot-Electron Device
- K. Seo
- Mordehai Heiblum
- et al.
- 1989
- IEEE Electron Device Letters
High-Quality Deposited Gate Oxide MOSFET’s and the Importance of Surface Preparation
- J.W. Stasiak
- J. Batey
- et al.
- 1989
- IEEE Electron Device Letters
Sidewall Oxidation of Polycrystalline-Silicon Gate
- Joseph Piccirillo
- Arup Bhattacharyya
- et al.
- 1989
- IEEE Electron Device Letters
A Reduced-Field Design Concept for High-Performance Bipolar Transistors
- Denny D. Tang
- Pong-Fei Lu
- 1989
- IEEE Electron Device Letters
Hot-Electron-Induced Instability in 0.5-μm p-Channel MOSFET’s Patterned Using Synchrotron X-ray Lithography
- C.C.-H. Hsu
- L.K. Wang
- et al.
- 1989
- IEEE Electron Device Letters
Recombination Lifetime Profiling in Very Thin Si Epitaxial Layers Used for Bipolar VLSI
- Paolo Spirito
- S. Bellone
- et al.
- 1989
- IEEE Electron Device Letters