Sub-300-ps CBL Circuits
- S.K. Wiedmann
- Tze Chiang Chen
- et al.
- 1989
- IEEE Electron Device Letters
Paper
Publications
307 results at IEEE Electron Device Letters
High-Quality Deposited Gate Oxide MOSFET’s and the Importance of Surface Preparation
- J.W. Stasiak
- J. Batey
- et al.
- 1989
- IEEE Electron Device Letters
PaperSidewall Oxidation of Polycrystalline-Silicon Gate
- Joseph Piccirillo
- Arup Bhattacharyya
- et al.
- 1989
- IEEE Electron Device Letters
PaperRecombination Lifetime Profiling in Very Thin Si Epitaxial Layers Used for Bipolar VLSI
- Paolo Spirito
- S. Bellone
- et al.
- 1989
- IEEE Electron Device Letters
PaperHot-Electron-Induced Instability in 0.5-μm p-Channel MOSFET’s Patterned Using Synchrotron X-ray Lithography
- C.C.-H. Hsu
- L.K. Wang
- et al.
- 1989
- IEEE Electron Device Letters
PaperA Reduced-Field Design Concept for High-Performance Bipolar Transistors
- Denny D. Tang
- Pong-Fei Lu
- 1989
- IEEE Electron Device Letters
PaperHigh-Gain Pseudomorphic InGaAs Base Ballistic Hot-Electron Device
- K. Seo
- Mordehai Heiblum
- et al.
- 1989
- IEEE Electron Device Letters
PaperA Submicrometer High-Performance Bipolar Technology
- Tze-Chiang Chen
- Kai-Yap Toh
- et al.
- 1989
- IEEE Electron Device Letters
PaperModeling of Currents in a Vertical p-n-p Transistor with Extremely Shallow Emitter
- Mary Jo Saccamango
- Tze-Chiang Chen
- 1989
- IEEE Electron Device Letters
PaperEpitaxial base transistors with ultrahigh vacuum chemical vapor deposition (uhv/cvd) epitaxy: Enhanced profile control for greater flexibility in device design
- David L. Harame
- Johannes M.C. Stork
- et al.
- 1989
- IEEE Electron Device Letters
Paper