Performance comparison and channel length scaling of strained Si FETs on SiGe-on-insulator (SGOI)
- J. Cai
- K. Rim
- et al.
- 2004
- IEDM 2004
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14201 results for Physical Sciences
Aggressively scaled (0.143 μm 2) 6T-SRAM cell for the 32 nm node and beyond
- D. Fried
- J. Hergenrother
- et al.
- 2004
- IEDM 2004
Charge trapping in aggressively scaled metal gate/high-κ stacks
- E. Gusev
- V. Narayanan
- et al.
- 2004
- IEDM 2004
Spintronic materials and devices: Past, present and future!
- Stuart S.P. Parkin
- 2004
- IEDM 2004
Carbon nanotube electronics and optoelectronics
- Ph. Avouris
- A. Afzali
- et al.
- 2004
- IEDM 2004
Novel carbon nanotube FET design with tunable polarity
- Yu-Ming Lin
- Joerg Appenzeller
- et al.
- 2004
- IEDM 2004
RF power potential of 90 nm CMOS: Device options, performance, and reliability
- Jörg Scholvin
- David R. Greenberg
- et al.
- 2004
- IEDM 2004
Self-aligned carbon nanotube transistors with novel chemical doping
- Jia Chen
- Christian Klinke
- et al.
- 2004
- IEDM 2004
Relevance of remote scattering in gate to channel mobility of thin-oxide CMOS devices
- Paul M. Solomon
- Min Yang
- 2004
- IEDM 2004
High performance and low power transistors integrated in 65nm bulk CMOS technology
- Z. Luo
- A. Steegen
- et al.
- 2004
- IEDM 2004