Properties of Ge-doped GaAs and Alx Ga1-xAs, Sn-doped Alx Ga1-xAs and Si-Te-doped GaAs
- K.K. Shih
- G.D. Pettit
- 1974
- Journal of Electronic Materials
Paper
Publications
24874 results for Exploratory Science
Resonant Raman scattering from FeS2 (pyrite)
- R.M. Macfarlane
- S. Ushioda
- et al.
- 1974
- Solid State Communications
PaperInequalities for the exponents of critical slowing down in the two-dimensional one-spin-flip Ising model
- T. Schneider
- 1974
- Physical Review B
PaperAmorphous magnetic materials for bubble domain and magneto-optics application
- J.J. Cuomo
- P. Chaudhari
- et al.
- 1974
- Journal of Electronic Materials
PaperEffects of HCl and Cl2 additions on silicon oxidation kinetics
- Y.J. van der Meulen
- J.G. Cahill
- 1974
- Journal of Electronic Materials
PaperPhase transitions in a simple model ferroelectric-comparison of exact and variational treatments of a molecular-field Hamiltonian
- N.S. Gillis
- T.R. Koehler
- 1974
- Physical Review B
PaperPhotoemission spectroscopy using synchrotron radiation. I. Overviews of valence-band structure for Ge, GaAs, GaP, InSb, ZnSe, CdTe, and Agl
- D.E. Eastman
- W.D. Grobman
- et al.
- 1974
- Physical Review B
PaperX-ray photoemission studies of the alkali halides
- S.P. Kowalczyk
- F.R. McFeely
- et al.
- 1974
- Physical Review B
PaperSelf-consistent band structure of ordered β-brass
- V.L. Moruzzi
- A.R. Williams
- et al.
- 1974
- Physical Review B
PaperEvidence for a mobility edge in inversion layers
- Frank Stern
- 1974
- Physical Review B
Review