Raman scattering characterization of Ga1-xAlxAs/GaAs heterojunctions: Epilayer and interface
- P. Parayanthal
- Fred H. Pollak
- et al.
- 1982
- Applied Physics Letters
Paper
Publications
2351 results at Applied Physics Letters
Optimization of dc SQUID linear amplifiers and the quantum noise limit
- C.D. Tesche
- 1982
- Applied Physics Letters
PaperThermal regrowth of silicon(111) surface during ion bombardment
- Ming L. Yu
- 1982
- Applied Physics Letters
PaperVoltage-controlled photoetching of GaAs
- H.J. Hoffmann
- J. Woodall
- et al.
- 1981
- Applied Physics Letters
PaperLow-temperature redistribution of As in Si during Pd2Si formation
- I. Ohdomari
- K.N. Tu
- et al.
- 1981
- Applied Physics Letters
PaperUncertainty principle limit to the energy sensitivity of SQUID's and other linear amplifiers
- Richard F. Voss
- 1981
- Applied Physics Letters
PaperGe-GaAs superlattices by molecular beam epitaxy
- Chin-An Chang
- Armin Segmüller
- et al.
- 1981
- Applied Physics Letters
PaperLack of importance of ambient gases on picosecond laser-induced phase transitions of silicon
- J.M. Liu
- R. Yen
- et al.
- 1981
- Applied Physics Letters
PaperEffect of substrate surface treatment in molecular beam epitaxy on the vertical electronic transport through the film-substrate interface
- Chin-An Chang
- M. Heiblum
- et al.
- 1981
- Applied Physics Letters
PaperMicrowave-induced "Devil's Staircase" structure and "chaotic" behavior in current-fed Josephson junctions
- E. Ben-Jacob
- Y. Braiman
- et al.
- 1981
- Applied Physics Letters
Paper