Gate-Self-Aligned P-Channel Germanium Misfet's
- Thomas N. Jackson
- C.M. Ransom
- et al.
- 1991
- IEEE Electron Device Letters
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306 results at IEEE Electron Device Letters
Silicon Optical Modulators at 1.3 μm Based on Free-Carrier Absorption
- G.V. Treyz
- Jean-Marc Halbout
- et al.
- 1991
- IEEE Electron Device Letters
High-Performance Bipolar Technology for Improved ECL Power Delay
- J. Warnock
- J.D. Cressler
- et al.
- 1991
- IEEE Electron Device Letters
Reduction of Backgating in GaAs SISFET’s with a Low-Temperature Buffer
- Paul M. Solomon
- Steven L. Wright
- et al.
- 1991
- IEEE Electron Device Letters
Novel In-Situ Doped Polysilicon Emitter Process with Buried Diffusion Source (Bds)
- Joachim N. Burghartz
- Andrew C. Megdanis
- et al.
- 1991
- IEEE Electron Device Letters
High-Mobility Modulation-Doped Graded Sige-Channel P-Mosfet's
- Sophie Verdonckt-Vandebroek
- Emmanuel F. Crabbé
- et al.
- 1991
- IEEE Electron Device Letters
Novel Inas/(Al, Ga)Sb Fet with Direct Gate-To-Channel Contact
- David J. Frank
- D. C. La Tulipe
- et al.
- 1991
- IEEE Electron Device Letters
1.3-μm P-I-N Photodetector using GaAs with As Precipitates (Gaas:As)
- Alan C. Warren
- J.H. Burroughes
- et al.
- 1991
- IEEE Electron Device Letters
Sub-30-ps ECL Circuit Operation at Liquid-Nitrogen Temperature Using Self-Aligned Epitaxial SiGe-Base Bipolar Transistors
- John D. Cressler
- James H. Comfort
- et al.
- 1991
- IEEE Electron Device Letters
Collector Signal Delay in the Presence of Velocity Overshoot
- Steven E. Laux
- Wai Lee
- 1990
- IEEE Electron Device Letters