Disilane: A new silicon doping source in metalorganic chemical vapor deposition of GaAs
- T.F. Kuech
- B.S. Meyerson
- et al.
- 1984
- Applied Physics Letters
Publications
2347 results at Applied Physics Letters
Microscopic model for the ablative photodecomposition of polymers by far-ultraviolet radiation (193 nm)
- Barbara J. Garrison
- R. Srinivasan
- 1984
- Applied Physics Letters
Synchrotron photoemission investigation: Fluorine on silicon surfaces
- J.F. Morar
- F.R. McFeely
- et al.
- 1984
- Applied Physics Letters
Temperature dependence of the electron mobility in GaAs-GaAlAs heterostructures
- E. Mendez
- P.J. Price
- et al.
- 1984
- Applied Physics Letters
Laser detection of diatomic products of plasma sputtering and etching
- R.E. Walkup
- Ph. Avouris
- et al.
- 1984
- Applied Physics Letters
Diffusion of phosphorus during rapid thermal annealing of ion-implanted silicon
- G.S. Oehrlein
- S. Cohen
- et al.
- 1984
- Applied Physics Letters
Study of silicon contamination and near-surface damage caused by CF 4/H2 reactive ion etching
- G.S. Oehrlein
- R.M. Tromp
- et al.
- 1984
- Applied Physics Letters
Channeling in low energy boron ion implantation
- Alwin E. Michel
- R.H. Kastl
- et al.
- 1984
- Applied Physics Letters
Exact description and data fitting of ion-implanted dopant profile evolution during annealing
- R. Ghez
- G.S. Oehrlein
- et al.
- 1984
- Applied Physics Letters
Reduction of electron and hole trapping in SiO2 by rapid thermal annealing
- Z.A. Weinberg
- D.R. Young
- et al.
- 1984
- Applied Physics Letters