Rate of formation of silicon dioxide; Semiconducting ruthenium silicide
- F.M. D'Heurle
- R.D. Frampton
- et al.
- 1985
- Applied Physics Letters
Paper
Publications
2351 results at Applied Physics Letters
Spatially resolved defect mapping in semiconductors using laser-modulated thermoreflectance
- D. Guidotti
- H.M. Van Driel
- 1985
- Applied Physics Letters
PaperThermal coupling of particulates to substrates
- S. Utterback
- F.H. Dacol
- et al.
- 1985
- Applied Physics Letters
PaperDoping effects in reactive plasma etching of heavily doped silicon
- Young H. Lee
- Mao-Min Chen
- et al.
- 1985
- Applied Physics Letters
PaperTungsten-platinum alloy Schottky barriers on n-type GaAs
- T. Okumura
- K.N. Tu
- 1985
- Applied Physics Letters
PaperAccurate phase capacitance spectroscopy of transition metal silicon diodes
- Howard L. Evans
- Xu Wu
- et al.
- 1985
- Applied Physics Letters
PaperReduction of background doping in metalorganic vapor phase epitaxy of GaAs using triethylgallium at low reactor pressures
- T.F. Kuech
- R.M. Potemski
- 1985
- Applied Physics Letters
PaperEffect of dopant on reaction between polycrystalline silicon and thin-film rhodium
- P.A. Psaras
- R.D. Thompson
- et al.
- 1985
- Applied Physics Letters
PaperPolymethyl methacrylate resist sensitivity enhancement in x-ray lithography by in situ polymerization
- W.-T. Liu
- J.C. Corelli
- et al.
- 1984
- Applied Physics Letters
PaperSurface versus bulk magnetization curves in amorphous GdCo cosputtered in the presence of oxygen
- H.C. Siegmann
- E. Kay
- 1984
- Applied Physics Letters
Paper