Rate of formation of silicon dioxide; Semiconducting ruthenium silicide
- F.M. D'Heurle
- R.D. Frampton
- et al.
- 1985
- Applied Physics Letters
Paper
Publications
2351 results at Applied Physics Letters
Non-alloyed ohmic contact to n-GaAs by solid phase epitaxy
- E.D. Marshall
- W.X. Chen
- et al.
- 1985
- Applied Physics Letters
PaperThermal and chemical stability of Schottky metallization on GaAs
- S.S. Lau
- W.X. Chen
- et al.
- 1985
- Applied Physics Letters
PaperGrowth of molybdenum and tungsten on GaAs in a molecular beam epitaxy system
- J. Bloch
- M. Heiblum
- et al.
- 1985
- Applied Physics Letters
PaperHigh-speed electroplating of copper using the laser-jet technique
- R.J. Von Gutfeld
- D.R. Vigliotti
- 1985
- Applied Physics Letters
PaperTunneling hot-electron transfer amplifier: A hot-electron GaAs device with current gain
- M. Heiblum
- D.C. Thomas
- et al.
- 1985
- Applied Physics Letters
PaperEnergy band discontinuities in heterojunctions measured by internal photoemission
- M. Heiblum
- M.I. Nathan
- et al.
- 1985
- Applied Physics Letters
PaperEffect of dopant on reaction between polycrystalline silicon and thin-film rhodium
- P.A. Psaras
- R.D. Thompson
- et al.
- 1985
- Applied Physics Letters
PaperDetection of SiH2 in silane and disilane glow discharges by frequency modulation absorption spectroscopy
- J.M. Jasinski
- E.A. Whittaker
- et al.
- 1984
- Applied Physics Letters
PaperSynchrotron photoemission investigation: Fluorine on silicon surfaces
- J.F. Morar
- F.R. McFeely
- et al.
- 1984
- Applied Physics Letters
Paper