Room-temperature electron trapping in Al0.35Ga 0.65As/GaAs modulation-doped field-effect transistors
- Marshall I. Nathan
- P.M. Mooney
- et al.
- 1985
- Applied Physics Letters
Paper
Publications
2351 results at Applied Physics Letters
Investigation of transient diffusion effects in rapid thermally processed ion implanted arsenic in silicon
- T.O. Sedgwick
- Alwin E. Michel
- et al.
- 1985
- Applied Physics Letters
PaperUniform and thermally stable AuGeNi ohmic contacts to GaAs
- A.C. Callegari
- E.T-S. Pan
- et al.
- 1985
- Applied Physics Letters
PaperLaser chemical vapor deposition of copper
- F.A. Houle
- C.R. Jones
- et al.
- 1985
- Applied Physics Letters
PaperCrystal orientation dependence of silicon doping in molecular beam epitaxial AlGaAs/GaAs heterostructures
- W.I. Wang
- E. Mendez
- et al.
- 1985
- Applied Physics Letters
PaperThermal and chemical stability of Schottky metallization on GaAs
- S.S. Lau
- W.X. Chen
- et al.
- 1985
- Applied Physics Letters
PaperNon-alloyed ohmic contact to n-GaAs by solid phase epitaxy
- E.D. Marshall
- W.X. Chen
- et al.
- 1985
- Applied Physics Letters
PaperControlled low barrier height n+-InGaAs/n-GaAs pseudomorphic heterojunction schottky diodes
- A.W. Kleinsasser
- J. Woodall
- et al.
- 1985
- Applied Physics Letters
PaperRaman spectroscopy of PtSi formation at the Pt/Si(100) interface
- J.C. Tsang
- Y. Yokota
- et al.
- 1984
- Applied Physics Letters
PaperIV curves of long annular Josephson junctions
- A. Davidson
- N.F. Pedersen
- 1984
- Applied Physics Letters
Paper