Publications

307 results at IEEE Electron Device Letters

BiCMOS Technology with 60-GHz n-p-n Bipolar and 0.25-μm CMOS
- - James Warnock
  - Ghavam G. Shahidi
  - et al.
- 1992
- IEEE Electron Device Letters
Metal Migration into Polysilicon Emitter After Very High Current Stress
- - Denny D. Tang
  - Catherine Wong
  - et al.
- 1992
- IEEE Electron Device Letters
Effects of X-Ray Irradiation on GIDL in MOSFET's
- - Alexandre Acovic
  - Charles Ching-Hsiang Hsu
  - et al.
- 1992
- IEEE Electron Device Letters
A New “Shift and Ratio” Method for MOSFET Channel-Length Extraction
- - Yuan Taur
  - D.S. Zicherman
  - et al.
- 1992
- IEEE Electron Device Letters
73-GHz Self-Aligned SiGe-Base Bipolar Transistors with Phosphorus-Doped Polysilicon Emitters
- - Emmanuel F. Crabbé
  - James H. Comfort
  - et al.
- 1992
- IEEE Electron Device Letters
InP/InGaAs Heterojunction Bipolar Transistors Grown by Gas-Source Molecular Beam Epitaxy with Carbon-Doped Base
- - Russell C. Gee
  - Tsung-Pei Chin
  - et al.
- 1992
- IEEE Electron Device Letters
Partial-SOI Isolation Structure for Reduced Bipolar Transistor Parasitics
- - Joachim N. Burghartz
  - John D. Cressler
  - et al.
- 1992
- IEEE Electron Device Letters
A Scaled 0.25- μm Bipolar Technology Using Full e-Beam Lithography
- - John D. Cressler
  - James Warnock
  - et al.
- 1992
- IEEE Electron Device Letters
Experimental Verification of the Mechanism of Hot-Carrier-Induced Photon Emission in N-MOSFET's using an Overlapping CCD Gate Structure
- - Hon-Sum Wong
- 1992
- IEEE Electron Device Letters
Gate-Self-Aligned P-Channel Germanium Misfet's
- - Thomas N. Jackson
  - C.M. Ransom
  - et al.
- 1991
- IEEE Electron Device Letters