BiCMOS Technology with 60-GHz n-p-n Bipolar and 0.25-μm CMOS
- James Warnock
- Ghavam G. Shahidi
- et al.
- 1992
- IEEE Electron Device Letters
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High-Transconductance n-Type Si/SiGe Modulation-Doped Field-Effect Transistors
- K. Ismail
- B.S. Meyerson
- et al.
- 1992
- IEEE Electron Device Letters
Experimental Verification of the Mechanism of Hot-Carrier-Induced Photon Emission in N-MOSFET's using an Overlapping CCD Gate Structure
- Hon-Sum Wong
- 1992
- IEEE Electron Device Letters
Enhanced Mobility Top-Gate Amorphous Silicon Thin-Film Transistor with Selectively Deposited Source/Drain Contacts
- G.N. Parsons
- 1992
- IEEE Electron Device Letters
Partial-SOI Isolation Structure for Reduced Bipolar Transistor Parasitics
- Joachim N. Burghartz
- John D. Cressler
- et al.
- 1992
- IEEE Electron Device Letters
A New “Shift and Ratio” Method for MOSFET Channel-Length Extraction
- Yuan Taur
- D.S. Zicherman
- et al.
- 1992
- IEEE Electron Device Letters
73-GHz Self-Aligned SiGe-Base Bipolar Transistors with Phosphorus-Doped Polysilicon Emitters
- Emmanuel F. Crabbé
- James H. Comfort
- et al.
- 1992
- IEEE Electron Device Letters
InP/InGaAs Heterojunction Bipolar Transistors Grown by Gas-Source Molecular Beam Epitaxy with Carbon-Doped Base
- Russell C. Gee
- Tsung-Pei Chin
- et al.
- 1992
- IEEE Electron Device Letters
A Gate-Quality Dielectric System for Sige Metal-Oxide-Semiconductor Devices
- Alan C. Warren
- 1991
- IEEE Electron Device Letters
High-Transconductance P-Channel Algaas/Gaas Hfet's with Low-Energy Beryllium and Fluorine Co-Implantation Self-Alignment
- Richard A. Kiehl
- P.E. Hallali
- et al.
- 1991
- IEEE Electron Device Letters