Partial-SOI Isolation Structure for Reduced Bipolar Transistor Parasitics
- Joachim N. Burghartz
- John D. Cressler
- et al.
- 1992
- IEEE Electron Device Letters
Paper
Publications
307 results at IEEE Electron Device Letters
Metal Migration into Polysilicon Emitter After Very High Current Stress
- Denny D. Tang
- Catherine Wong
- et al.
- 1992
- IEEE Electron Device Letters
PaperA New “Shift and Ratio” Method for MOSFET Channel-Length Extraction
- Yuan Taur
- D.S. Zicherman
- et al.
- 1992
- IEEE Electron Device Letters
PaperBiCMOS Technology with 60-GHz n-p-n Bipolar and 0.25-μm CMOS
- James Warnock
- Ghavam G. Shahidi
- et al.
- 1992
- IEEE Electron Device Letters
Paper73-GHz Self-Aligned SiGe-Base Bipolar Transistors with Phosphorus-Doped Polysilicon Emitters
- Emmanuel F. Crabbé
- James H. Comfort
- et al.
- 1992
- IEEE Electron Device Letters
PaperHigh-Transconductance n-Type Si/SiGe Modulation-Doped Field-Effect Transistors
- K. Ismail
- B.S. Meyerson
- et al.
- 1992
- IEEE Electron Device Letters
PaperExperimental Verification of the Mechanism of Hot-Carrier-Induced Photon Emission in N-MOSFET's using an Overlapping CCD Gate Structure
- Hon-Sum Wong
- 1992
- IEEE Electron Device Letters
PaperA Scaled 0.25- μm Bipolar Technology Using Full e-Beam Lithography
- John D. Cressler
- James Warnock
- et al.
- 1992
- IEEE Electron Device Letters
PaperInP/InGaAs Heterojunction Bipolar Transistors Grown by Gas-Source Molecular Beam Epitaxy with Carbon-Doped Base
- Russell C. Gee
- Tsung-Pei Chin
- et al.
- 1992
- IEEE Electron Device Letters
PaperNovel Inas/(Al, Ga)Sb Fet with Direct Gate-To-Channel Contact
- David J. Frank
- D. C. La Tulipe
- et al.
- 1991
- IEEE Electron Device Letters
Paper