B.S. Meyerson, F. Legoues, et al.
Applied Physics Letters
We report on the fabrication and the resultant device characteristics of the first 0.25-μm gate-length field-effect transistor based on n-type modulation-doped Si/SiGe. Prepared employing ultrahigh vacuum/chemical vapor deposition (UHV/CVD), the mobility and electron sheet charge density in the strained Si channel are 1500 (9500) cm2/V s and 2.5 x 1012 (1.5 x 1012) cm-2 at 300 K (77 K). At 77 K, the devices have a current and transconductance of 325 mA/mm and 600 mS/mm, respectively. These values far exceed those found in Si MESFET's and are comparable to the best results achieved in GaAs/AlGaAs modulation-doped transistors. © 1992 IEEE
B.S. Meyerson, F. Legoues, et al.
Applied Physics Letters
S.J. Wind, Y. Taur, et al.
MRS Spring Meeting 1995
K. Ismail, J.O. Chu, et al.
IEEE Electron Device Letters
G.L. Patton, B.S. Meyerson, et al.
Silicon Materials Science and Technology 1990