Formation of thin films of NiSi: Metastable structure, diffusion mechanisms in intermetallic compounds
- F.M. D'Heurle
- C.S. Petersson
- et al.
- 1984
- Journal of Applied Physics
Paper
Publications
2360 results at Journal of Applied Physics
Diffusion of arsenic in bilayer polycrystalline silicon films
- M. Arienzo
- Y. Komem
- et al.
- 1984
- Journal of Applied Physics
PaperA new adsorption substrate: Single crystal exfoliated graphite
- Roy Clarke
- P.M. Horn
- et al.
- 1984
- Journal of Applied Physics
PaperSequential silicide formation between vanadium and amorphous silicon thin-film bilayers
- P.A. Psaras
- M. Eizenberg
- et al.
- 1984
- Journal of Applied Physics
PaperElectron energy loss spectroscopy of ion irradiated ni-al alloys
- L.A. Grunes
- J.C. Barbour
- et al.
- 1984
- Journal of Applied Physics
PaperExcimer laser projection photoetching
- M.R. Latta
- R. Moore
- et al.
- 1984
- Journal of Applied Physics
PaperTechniques of flash radiometry
- W.P. Leung
- A.C. Tam
- 1984
- Journal of Applied Physics
PaperLow-temperature redistribution of As in Si during Ni silicide formation
- I. Ohdomari
- M. Akiyama
- et al.
- 1984
- Journal of Applied Physics
PaperElectron microscope studies of a Ge-GaAs superlattice grown by molecular beam epitaxy
- T.S. Kuan
- C.A. Chang
- 1983
- Journal of Applied Physics
PaperA study of the electrical and luminescence characteristics of a novel Si-based thin film electroluminescent device
- D.J. Robbins
- D.J. Dimaria
- et al.
- 1983
- Journal of Applied Physics
Paper