Publications

FinFET performance with Si:P and Ge:Group-III-Metal metastable contact trench alloys
- - Oleg Gluschenkov
  - Zuoguang Liu
  - et al.
- 2016
- IEDM 2016
Conference paper
Technology viable DC performance elements for Si/SiGe channel CMOS FinFTT
- - G. Tsutsui
  - Ruqiang Bao
  - et al.
- 2016
- IEDM 2016
Conference paper
Reliability study of a 128Mb phase change memory chip implemented with doped Ga-Sb-Ge with extraordinary thermal stability
- - W. Chien
  - Huai-Yu Cheng
  - et al.
- 2016
- IEDM 2016
Conference paper
Contact resistivities in gamma-valley materials
- - Paul Solomon
- 2016
- IEDM 2016
Conference paper
CMOS compatible MIM decoupling capacitor with reliable sub-nm EOT high-k stacks for the 7 nm node and beyond
- - Takashi Ando
  - Eduard Cartier
  - et al.
- 2016
- IEDM 2016
Conference paper
Local thermometry of self-heated nanoscale devices
- - F. Menges
  - Fabian Motzfeld
  - et al.
- 2016
- IEDM 2016
Conference paper
High-Q magnetic inductors for high efficiency on-chip power conversion
- - Naigang Wang
  - Bruce Doris
  - et al.
- 2016
- IEDM 2016
Conference paper
Hot carrier effect in ultra-scaled replacement metal gate Si_i-xGe_x channel p-FinFETs
- - Miaomiao Wang
  - X. Miao
  - et al.
- 2016
- IEDM 2016
Conference paper
ALD-based confined PCM with a metallic liner toward unlimited endurance
- - Wanki Kim
  - Matthew BrightSky
  - et al.
- 2016
- IEDM 2016
Conference paper
A 7nm FinFET technology featuring EUV patterning and dual strained high mobility channels
- - Ruilong Xie
  - Pietro Montanini
  - et al.
- 2016
- IEDM 2016
Conference paper