Effect of the silicon doping concentration on the recombination kinetics of DX centers in Al0.35Ga0.65As
- N. Caswell
- P.M. Mooney
- et al.
- 1986
- Applied Physics Letters
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2344 results at Applied Physics Letters
Intensity-dependent cyclotron resonance in a GaAs/GaAlAs two-dimensional electron gas
- G.A. Rodríguez
- R.M. Hart
- et al.
- 1986
- Applied Physics Letters
Ultrasonic imaging of layered structures utilizing nondestructive subnanosecond photoacoustic pulse generation
- A.C. Tam
- G. Ayers
- 1986
- Applied Physics Letters
AlGaAs/GaAs(111) heterostructures grown by molecular beam epitaxy
- L. Vina
- W.I. Wang
- 1986
- Applied Physics Letters
Electro-optical response of a liquid-crystalline fiber coupler
- E.S. Goldburt
- P.St.J. Russell
- 1986
- Applied Physics Letters
Nondestructive depth profiling of carrier lifetimes in full silicon wafers
- D. Guidotti
- J.S. Batchelder
- et al.
- 1986
- Applied Physics Letters
Scanning thermal profiler
- C.C. Williams
- H.K. Wickramasinghe
- 1986
- Applied Physics Letters
Hot-electron capture to DX centers in AlxGa1-xAs at low Al mole fractions (x<0.2)
- T.N. Theis
- B.D. Parker
- et al.
- 1986
- Applied Physics Letters
Electron beam evaporation of oriented Nb films onto GaAs crystals in ultrahigh vacuum
- M. Eizenberg
- D.A. Smith
- et al.
- 1986
- Applied Physics Letters
Low-loss electron images of uncoated photoresist in the scanning electron microscope
- Oliver C. Wells
- 1986
- Applied Physics Letters