L.F. Luo, R. Beresford, et al.
Applied Physics Letters
Paper
AlGaAs/GaAs(111) heterostructures grown by molecular beam epitaxy
Abstract
We have grown AlGaAs/GaAs heterostructures on (111) oriented GaAs substrates by molecular beam epitaxy. Materials with good optical and electrical properties, including mobility enhancement in two-dimensional electron and hole gases, have been obtained for the first time.
Related
L. Vina, E. Mendez, et al.
Journal of Physics C: Solid State Physics
S.S. Bose, B. Lee, et al.
Journal of Applied Physics
Y. Hsu, W.I. Wang, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures