S. Tiwari, W.I. Wang
IEEE Electron Device Letters
Paper
AlGaAs/GaAs(111) heterostructures grown by molecular beam epitaxy
Abstract
We have grown AlGaAs/GaAs heterostructures on (111) oriented GaAs substrates by molecular beam epitaxy. Materials with good optical and electrical properties, including mobility enhancement in two-dimensional electron and hole gases, have been obtained for the first time.
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