Correlation of Id- and Ig-random telegraph noise to positive bias temperature instability in scaled high-κ/metal gate n-type MOSFETs
- Chia-Yu Chen
- Qiushi Ran
- et al.
- 2011
- IRPS 2011
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14 results at IRPS 2011
A robust reliability methodology for accurately predicting Bias Temperature Instability induced circuit performance degradation in HKMG CMOS
- D.P. Ioannou
- K. Zhao
- et al.
- 2011
- IRPS 2011
Post-breakdown statistics and acceleration characteristics in high-K dielectric stacks
- Ernest Wu
- Jordi Sune
- et al.
- 2011
- IRPS 2011
Impact of source/drain contact and gate finger spacing on the RF reliability of 45-nm RF nMOSFETs
- Rajan Arora
- Sachin Seth
- et al.
- 2011
- IRPS 2011