Bias Temperature Instability model for digital circuits - Predicting instantaneous FET responseAditya BansalKai Zhaoet al.2011IRPS 2011
Spectral resolution of photon emission from SiGe:C heterojunction bipolar transistors (HBTs)Ulrike KindereitOana-Mihaela Mutihacet al.2011IRPS 2011
Metastability of hydrogenated amorphous silicon passivation on crystalline silicon and implication to photovoltaic devicesBahman HekmatshoarDavood Shahrjerdiet al.2011IRPS 2011
Impact of source/drain contact and gate finger spacing on the RF reliability of 45-nm RF nMOSFETsRajan AroraSachin Sethet al.2011IRPS 2011