A high performance phase change memory with fast switching speed and high temperature retention by engineering the Ge xSb yTe z phase change material
- H.Y. Cheng
- T.H. Hsu
- et al.
- 2011
- IEDM 2011
Publications
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23 results at IEDM 2011
High-frequency performance of graphene field effect transistors with saturating IV-characteristics
- Inanc Meric
- Cory R. Dean
- et al.
- 2011
- IEDM 2011
Complementary thin-base symmetric lateral bipolar transistors on SOI
- Jin Cai
- Tak H. Ning
- et al.
- 2011
- IEDM 2011
Racetrack memory cell array with integrated magnetic tunnel junction readout
- A. Annunziata
- M.C. Gaidis
- et al.
- 2011
- IEDM 2011
A manufacturable dual channel (Si and SiGe) high-k metal gate CMOS technology with multiple oxides for high performance and low power applications
- S. Krishnan
- U. Kwon
- et al.
- 2011
- IEDM 2011
Drift-resilient cell-state metric for multilevel phase-change memory
- 2011
- IEDM 2011
Racetrack memory: A high-performance, low-cost, non-volatile memory based on magnetic domain walls
- Luc Thomas
- See-Hun Yang
- et al.
- 2011
- IEDM 2011
3D copper TSV integration, testing and reliability
- Mukta Farooq
- T. Graves-Abe
- et al.
- 2011
- IEDM 2011
Improving the energy/power constraint for technology optimization
- David J. Frank
- Leland Chang
- et al.
- 2011
- IEDM 2011
Graphene technology with inverted-T gate and RF passives on 200 mm platform
- Shu-Jen Han
- Alberto Valdes-Garcia
- et al.
- 2011
- IEDM 2011