QDAME simulation of 7.5 nm double-gate Si nFETs with differing access geometriesS.E. LauxA. Kumaret al.2002IEDM 2002
Examination of hole mobility in ultra-thin body SOI MOSFETsZhibin RenPaul M. Solomonet al.2002IEDM 2002
Performance enhancement on sub-70 nm strained silicon SOI MOSFETS on ultra-thin thermally mixed strained silicon/SiGe on insulator(TM-SGOI) substrate with raised S/DB.H. LeeA.C. Mocutaet al.2002IEDM 2002