Publications

15 results at IEDM 2008

Experimental and theoretical analysis of factors causing asymmetrical temperature dependence of v_t in High-k Metal gate CMOS with capped High-k techniques
- - Ryosuke Iijima
  - Mariko Takayanagi
- 2008
- IEDM 2008
Mechanisms of retention loss in Ge₂Sb₂Te ₅-based phase-change memory
- - Y.H. Shih
  - J.Y. Wu
  - et al.
- 2008
- IEDM 2008
22 nm technology compatible fully functional 0.1 μm ² 6T-sram cell
- - B. Haran
  - A. Kumar
  - et al.
- 2008
- IEDM 2008
32nm general purpose bulk CMOS technology for high performance applications at low voltage
- - F. Arnaud
  - J. Liu
  - et al.
- 2008
- IEDM 2008
A statistical study of magnetic tunnel junctions for high-density spin torque transfer-MRAM (STT-MRAM)
- - R. Beach
  - T. Min
  - et al.
- 2008
- IEDM 2008