High-performance nMOSFET with in-situ phosphorus-doped embedded Si:C (ISPD eSi:C) source-drain stressor
- B. Yang
- R. Takalkar
- et al.
- 2008
- IEDM 2008
Publications
15 results at IEDM 2008
Scaling of ino.7gao.3as buried-channel MOSFETs
- Yanning Sun
- E.W. Kiewra
- et al.
- 2008
- IEDM 2008
Demonstration of highly scaled FinFET SRAM cells with high-Κ/metal gate and investigation of characteristic variability for the 32 nm node and beyond
- H. Kawasaki
- M. Khater
- et al.
- 2008
- IEDM 2008
Gate length scaling and high drive currents enabled for high performance SOI technology using high-κ/metal gate
- K. Henson
- H. Bu
- et al.
- 2008
- IEDM 2008
On the difference of temperature dependence of metal gate and poly gate SOI MOSFET threshold voltages
- Shu-Jen Han
- Xinlin Wang
- et al.
- 2008
- IEDM 2008