Schottky diodes on hydrogen plasma treated n-GaAs surfaces
- A. Paccagnella
- A.C. Callegari
- et al.
- 1989
- Applied Physics Letters
Paper
Publications
2351 results at Applied Physics Letters
Diode laser pumped blue-light source based on intracavity sum frequency generation
- W.P. Risk
- W. Lenth
- 1989
- Applied Physics Letters
PaperEffect of heat treatments on the electrical resistivity of Sb-doped amorphous Si films deposited by molecular beam on (100) Si
- Y. Komem
- M. Arienzo
- et al.
- 1989
- Applied Physics Letters
PaperReaction of trimethylgallium in the atomic layer epitaxy of GaAs (100)
- Ming L. Yu
- Ulrich Memmert
- et al.
- 1989
- Applied Physics Letters
PaperFormation of palladium silicide in the presence of Al with and without a carbon barrier layer
- Chin-An Chang
- 1989
- Applied Physics Letters
PaperObservation of light-induced defect formation in hydrogenated amorphous silicon by subgap illumination
- Andrew Skumanich
- Mohamed Fathallah
- et al.
- 1989
- Applied Physics Letters
PaperEnhanced Schottky barriers produced by recoil implantation of Mg into n-GaAs
- M. Eizenberg
- A.C. Callegari
- et al.
- 1989
- Applied Physics Letters
PaperLow-temperature selective epitaxial growth of silicon at atmospheric pressure
- T.O. Sedgwick
- M. Berkenblit
- et al.
- 1989
- Applied Physics Letters
PaperInelastic tunneling in (111) oriented AlAs/GaAs/AlAs double-barrier heterostructures
- L.F. Luo
- R. Beresford
- et al.
- 1989
- Applied Physics Letters
PaperEpitaxial growth of YBa2Cu3O7-δ thin films on LiNbO3 substrates
- S.G. Lee
- G. Koren
- et al.
- 1989
- Applied Physics Letters
Paper