Yanning Sun, E.W. Kiewra, et al.
IEEE Electron Device Letters
Paper
Enhanced Schottky barriers produced by recoil implantation of Mg into n-GaAs
Abstract
Enhancement of Schottky barrier height of Ti-Pt-Au on n-type GaAs was obtained by heavily (2×1018 cm-3) counter doping the near-surface region of the substrate. The p-type region was produced by recoil implantation of Mg from a Mg thin film (300 Å) irradiated by a 60 keV As+ beam. The film was subsequently chemically etched. The recoil-implanted samples showed an enhancement of 140 meV in the Schottky barrier height following rapid thermal annealing in an AsH3 furnace at 850°C for nominal zero second.
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