Electronic probe measurements of pulsed copper ablation at 248 nm
- R.J. Von Gutfeld
- R.W. Dreyfus
- 1989
- Applied Physics Letters
Paper
Publications
2351 results at Applied Physics Letters
Indium adatom migration during molecular beam epitaxial growth of strained InGaAs/GaAs single quantum wells
- D.J. Arent
- S. Nilsson
- et al.
- 1989
- Applied Physics Letters
PaperUltrafast imaging of ultraviolet laser ablation and etching of polymethylmethacrylate
- R. Srinivasan
- Bodil Braren
- et al.
- 1989
- Applied Physics Letters
PaperRole of gas phase reactions in silicon chemical vapor deposition from monosilane
- B.A. Scott
- R.D. Estes
- 1989
- Applied Physics Letters
PaperIon beam enhanced diffusion of B during Si molecular beam epitaxy
- P.R. Pukite
- Subramanian S. Iyer
- et al.
- 1989
- Applied Physics Letters
PaperScanning tunneling microscopy of insulators: CaF2 epitaxy on Si (111)
- Ph. Avouris
- R.A. Wolkow
- 1989
- Applied Physics Letters
PaperDiode laser pumped blue-light source at 473 nm using intracavity frequency doubling of a 946 nm Nd:YAG laser
- W.P. Risk
- R. Pon
- et al.
- 1989
- Applied Physics Letters
PaperUnpinned gallium oxide/GaAs interface by hydrogen and nitrogen surface plasma treatment
- A.C. Callegari
- P.D. Hoh
- et al.
- 1989
- Applied Physics Letters
PaperLow-noise thin-film TlBaCaCuO dc SQUIDs operated at 77 K
- R.H. Koch
- W.J. Gallagher
- et al.
- 1989
- Applied Physics Letters
PaperHigh-gain lateral hot-electron device
- A. Palevski
- C.P. Umbach
- et al.
- 1989
- Applied Physics Letters
Paper