Formation of arsenic precipitates in GaAs buffer layers grown by molecular beam epitaxy at low substrate temperatures
- M.R. Melloch
- N. Otsuka
- et al.
- 1990
- Applied Physics Letters
Paper
Publications
2351 results at Applied Physics Letters
Stable and shallow PdIn ohmic contacts to n-GaAs
- L.C. Wang
- X.Z. Wang
- et al.
- 1990
- Applied Physics Letters
PaperYBaCuO input coils with low Tc and high Tc SQUIDs
- B. Oh
- R.H. Koch
- et al.
- 1990
- Applied Physics Letters
PaperImportance of adsorption in ion beam induced deposition of carbon
- S.J. Kirch
- David Seeger
- 1990
- Applied Physics Letters
PaperAnomalous superperiodicity in scanning tunneling microscope images of graphite
- M. Kuwabara
- D.R. Clarke
- et al.
- 1990
- Applied Physics Letters
PaperPyrolysis of trimethylgallium on GaAs(100) surfaces
- Ulrich Memmert
- Ming L. Yu
- 1990
- Applied Physics Letters
PaperOptical-beam-deflection atomic force microscopy: The NaCl (001) surface
- Gerhard Meyer
- Nabil M. Amer
- 1990
- Applied Physics Letters
PaperObservation of large magneto-optical effects in amorphous U xSb1-x films
- M.W. McElfresh
- T.S. Plaskett
- et al.
- 1990
- Applied Physics Letters
PaperN+ doping of gallium arsenide by rapid thermal oxidation of a silicon cap
- D.K. Sadana
- J.P. De Souza
- et al.
- 1990
- Applied Physics Letters
PaperTantalum as a diffusion barrier between copper and silicon
- Karen Holloway
- Peter M. Fryer
- 1990
- Applied Physics Letters
Paper