J.-M. Halbout, P.G. May, et al.
Advances in Semiconductors and Semiconductor Structures 1987
Lanthanum hexaboride (LaB6) is investigated for its potential as a low work-function photocathode for high brightness e-beam applications. Thin films of LaB6 at room temperature are shown to have quantum efficiencies of 0.2×10-3 at 442 nm excitation but readily form an inhibiting oxide. This oxide is easily removed by in situ 500 eV Ar + ion sputtering, which restores photoemission for over 30 min at an oxygen partial pressure of 10-9 Torr.
J.-M. Halbout, P.G. May, et al.
Advances in Semiconductors and Semiconductor Structures 1987
C. Cabral Jr., L. Clevenger, et al.
Applied Physics Letters
S.-L. Zhang, J.M.E. Harper, et al.
Journal of Electronic Materials
R.F. Liu, C.-K. Hu, et al.
Journal of Applied Physics