Electronically active defects in the Cu 2ZnSn(Se,S) 4 alloys as revealed by transient photocapacitance spectroscopy
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- et al.
- 2012
- Applied Physics Letters
Paper
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2351 results at Applied Physics Letters
Impact of gate resistance in graphene radio frequency transistors
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- Applied Physics Letters
PaperMultiple implantation and multiple annealing of phosphorus doped germanium to achieve n-type activation near the theoretical limit
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- Applied Physics Letters
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- Applied Physics Letters
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- Applied Physics Letters
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- Applied Physics Letters
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- Applied Physics Letters
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- Applied Physics Letters
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- Applied Physics Letters
PaperFrequency division multiplexing readout and simultaneous manipulation of an array of flux qubits
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- 2012
- Applied Physics Letters
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