Publications

2351 results at Applied Physics Letters

Fundamental chemical differences among P_b defects on (111) and (100) silicon
- - J.H. Stathis
  - L. Dori
- 1991
- Applied Physics Letters
Submicron YBa₂Cu₃O_7-δ grain boundary junction dc SQUIDs
- - M. Kawasaki
  - P. Chaudhari
  - et al.
- 1991
- Applied Physics Letters
Thermal annealing of light-induced metastable defects in hydrogenated amorphous silicon nitride
- - E.D. Tober
  - Jerzy Kanicki
  - et al.
- 1991
- Applied Physics Letters
Reactive ion etching of SiGe alloys using HBr
- - Tim D. Bestwick
  - Gottlieb S. Oehrlein
  - et al.
- 1991
- Applied Physics Letters
Flexural resonant samples for submonolayer measurements of oxygen on Si surfaces
- - Russell W. Dreyfus
- 1991
- Applied Physics Letters
High carbon doping efficiency of bromomethanes in gas source molecular beam epitaxial growth of GaAs
- - T.J. De Lyon
  - N.I. Buchan
  - et al.
- 1991
- Applied Physics Letters
Reduced flux motion via flux creep annealing in high- J_c single-crystal Y₁Ba₂Cu₃O₇
- - J.R. Thompson
  - Yang Ren Sun
  - et al.
- 1991
- Applied Physics Letters
Morphology-enhanced metal-alumina adhesion by depositing textured alumina films on textured Teflon substrates
- - Chin-An Chang
  - Chin-Jong Chan
  - et al.
- 1991
- Applied Physics Letters
Wet etch process for patterning insulators suitable for epitaxial high T_c superconducting thin film multilevel electronic circuits
- - W. Eidelloth
  - W.J. Gallagher
  - et al.
- 1991
- Applied Physics Letters
High-frequency operation of heavily carbon-doped Ga_0.51In _0.49P/GaAs surface-emitting light-emitting diodes grown by metalorganic molecular beam epitaxy
- - T.J. De Lyon
  - J. Woodall
  - et al.
- 1991
- Applied Physics Letters