High electron mobility in modulation-doped Si/SiGe
- K. Ismail
- B.S. Meyerson
- et al.
- 1991
- Applied Physics Letters
Paper
Publications
2351 results at Applied Physics Letters
Centroid shift of γ rays from positron annihilation in the depletion region of metal-oxide-semiconductor structures
- T.C. Leung
- Y. Kong
- et al.
- 1991
- Applied Physics Letters
PaperProperties of SiO2/Si/GaAs structures formed by solid phase epitaxy of amorphous Si on GaAs
- A.C. Callegari
- D.K. Sadana
- et al.
- 1991
- Applied Physics Letters
PaperLocal electrical dissipation imaged by scanning force microscopy
- Winfried Denk
- Dieter W. Pohl
- 1991
- Applied Physics Letters
PaperResonant indirect Fowler-Nordheim tunneling in Al0.8Ga 0.2As barrier
- S.S. Lu
- K. Lee
- et al.
- 1991
- Applied Physics Letters
PaperSubpicosecond, freely propagating electromagnetic pulse generation and detection using GaAs:As epilayers
- Alan C. Warren
- N. Katzenellenbogen
- et al.
- 1991
- Applied Physics Letters
PaperSelective growth of silicon-germanium alloys by atmospheric-pressure chemical vapor deposition at low temperatures
- P. Agnello
- T.O. Sedgwick
- et al.
- 1991
- Applied Physics Letters
PaperIn situ buried GaInAs/InP quantum dot arrays by selective area metalorganic vapor phase epitaxy
- Yvan D. Galeuchet
- Hugo Rothuizen
- et al.
- 1991
- Applied Physics Letters
PaperEnhancement of optical reflectivity of high Tc superconducting films by ion milling
- J.H. Kim
- K. Char
- et al.
- 1991
- Applied Physics Letters
PaperOptimal parameters for AlGaAs-InGaAs-AlGaAs p-channel field-effect transistors
- B. Laikhtman
- R.A. Kiehl
- et al.
- 1991
- Applied Physics Letters
Paper