Energy level of the nitrogen dangling bond in amorphous silicon nitride

W.L. Warren; Jerzy Kanicki; J. Robertson; P. Lenahan

doi:10.1063/1.106222

Applied Physics Letters

Paper

01 Dec 1991

Energy level of the nitrogen dangling bond in amorphous silicon nitride

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Abstract

The composition dependence and room-temperature metastability of the paramagnetic nitrogen dangling-bond center is amorphous silicon nitride suggest that its energy level lies close to the N pπ states, in agreement with theoretical calculations.

Paper

Direct observation of the silicon nitride on amorphous silicon interface states

A. Gelatos, Jerzy Kanicki

Applied Physics Letters

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Photocreation and photobleaching of a-Si N_1.6:H/c-Si interface states studied by photocapacitance transient spectroscopy

C. Godet, Jerzy Kanicki

Physica B: Physics of Condensed Matter

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Electron paramagnetic resonance investigation of charge trapping centers in amorphous silicon nitride films

W.L. Warren, Jerzy Kanicki, et al.

Journal of Applied Physics

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PHOTOCONDUCITIVITY OF INTRINSIC AND DOPED a-Si:H FROM 0. 1 TO 1. 9 ev.

T. Inushima, M.H. Brodsky, et al.

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Abstract

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Direct observation of the silicon nitride on amorphous silicon interface states

Photocreation and photobleaching of a-Si N1.6:H/c-Si interface states studied by photocapacitance transient spectroscopy

Electron paramagnetic resonance investigation of charge trapping centers in amorphous silicon nitride films

PHOTOCONDUCITIVITY OF INTRINSIC AND DOPED a-Si:H FROM 0. 1 TO 1. 9 ev.

Photocreation and photobleaching of a-Si N_1.6:H/c-Si interface states studied by photocapacitance transient spectroscopy