W.L. Warren, F.C. Rong, et al.
Applied Physics Letters
Paper
Energy level of the nitrogen dangling bond in amorphous silicon nitride
Abstract
The composition dependence and room-temperature metastability of the paramagnetic nitrogen dangling-bond center is amorphous silicon nitride suggest that its energy level lies close to the N pπ states, in agreement with theoretical calculations.
Related
Conference paper
Paramagnetic nitrogen defects in silicon nitride
W.L. Warren, Jerzy Kanicki, et al.
MRS Proceedings 1992
M. Zelikson, K. Weiser, et al.
Journal of Non-Crystalline Solids
Jerzy Kanicki, M. Sankaran, et al.
Applied Physics Letters