Self-aligned SiGe NPN transistors with 285 GHz f MAX and 207 GHz f T in a manufacturable technology
- B. Jagannathan
- M. Khater
- et al.
- 2002
- IEEE Electron Device Letters
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Low Weibull slope of breakdown distributions in high-k layers
- Thomas Kauerauf
- Robin Degraeve
- et al.
- 2002
- IEEE Electron Device Letters
Effective crosstalk isolation through p+ Si substrates with semi-insulating porous Si
- Han-Su Kim
- Keith A. Jenkins
- et al.
- 2002
- IEEE Electron Device Letters
Sub-40 nm SOI V-groove n-MOSFETs
- Joerg Appenzeller
- R. Martel
- et al.
- 2002
- IEEE Electron Device Letters
The effect of change of voltage acceleration on temperature activation of oxide breakdown for ultrathin oxides
- E. Wu
- J.M. McKenna
- et al.
- 2001
- IEEE Electron Device Letters
Electrical characterization of Al2O3 n-channel MOSFETs with aluminum gates
- L.Å. Ragnarsson
- S. Guha
- et al.
- 2001
- IEEE Electron Device Letters
Deuterium passivation of interface traps in MOS devices
- Kangguo Cheng
- Karl Hess
- et al.
- 2001
- IEEE Electron Device Letters
SiGe pMODFETs on silicon-on-sapphire substrates with 116 GHz fmax
- S.J. Koester
- R. Hammond
- et al.
- 2001
- IEEE Electron Device Letters
Analytical solution to a double-gate MOSFET with undoped body
- Yuan Taur
- 2000
- IEEE Electron Device Letters
Extremely high transconductance Ge/Si0.4Ge0.6 p-MODFET's grown by UHV-CVD
- S.J. Koester
- R. Hammond
- et al.
- 2000
- IEEE Electron Device Letters