Oxygen assisted ohmic contact formation mechanism to n-type GaAs
- Naftali Lustig
- R.G. Schad
- 1992
- Applied Physics Letters
Paper
Publications
2351 results at Applied Physics Letters
Photoemission spectroscopy of GaAs:As photodiodes
- D.T. McInturff
- J. Woodall
- et al.
- 1992
- Applied Physics Letters
PaperRefractive index determination of SiGe using reactive ion etching/ellipsometry: Application of the depth profiling of the GE concentration
- G.M.W. Kroesen
- G.S. Oehrlein
- et al.
- 1992
- Applied Physics Letters
PaperIn situ transmission electron microscopy studies of silicide-mediated crystallization of amorphous silicon
- C. Hayzelden
- J.L. Batstone
- et al.
- 1992
- Applied Physics Letters
PaperHeavy arsenic doping of silicon grown by atmospheric-pressure chemical vapor deposition at low temperatures
- P. Agnello
- T.O. Sedgwick
- et al.
- 1992
- Applied Physics Letters
PaperEnhanced electro-optic effect in amorphous hydrogenated silicon based waveguides
- M. Zelikson
- J. Salzman
- et al.
- 1992
- Applied Physics Letters
PaperReactive ion etch damages in inverted, trilayer thin-film transistor
- Yue Kuo
- 1992
- Applied Physics Letters
PaperCopper diffusion in amorphous thin films of 4% phosphorus-silcate glass and hydrogenated silicon nitride
- D. Gupta
- K. Vieregge
- et al.
- 1992
- Applied Physics Letters
PaperHigh-density optical storage based on nanometer-size arsenic clusters in low-temperature-growth GaAs
- D.D. Nolte
- M.R. Melloch
- et al.
- 1992
- Applied Physics Letters
PaperIn situ study of relaxation of SiGe thin films by the modified Frank-Read mechanism
- F.K. LeGoues
- J.A. Ott
- et al.
- 1992
- Applied Physics Letters
Paper