A model for gate-oxide breakdown in CMOS inverters
- R. Rodríguez
- J.H. Stathis
- et al.
- 2003
- IEEE Electron Device Letters
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306 results at IEEE Electron Device Letters
Origin of the threshold voltage instability in SiO2/HfO2 dual layer gate dielectrics
- A. Kerber
- E. Cartier
- et al.
- 2003
- IEEE Electron Device Letters
Voltage dependence of hard breakdown growth and the reliability implication in thin dielectrics
- Barry P. Linder
- Salvatore Lombardo
- et al.
- 2002
- IEEE Electron Device Letters
1.5-V single work-function W/WN/n+-poly gate CMOS device design with 110-nm buried-channel PMOS for 90-nm vertical-cell DRAM
- Rajesh Rengarajan
- Boyong He
- et al.
- 2002
- IEEE Electron Device Letters
Charge trapping in ultrathin hafnium oxide
- W. Zhu
- T.P. Ma
- et al.
- 2002
- IEEE Electron Device Letters
A 4.2-ps ECL ring-oscillator in a 285-GHz f MAX SiGe technology
- Basanth Jagannathan
- Mounir Meghelli
- et al.
- 2002
- IEEE Electron Device Letters
The impact of gate-oxide breakdown SRAM stability
- R. Rodríguez
- J.H. Stathis
- et al.
- 2002
- IEEE Electron Device Letters
Simultaneous optimization of short-channel effects and junction capacitance in pMOSFET using large-angle-tilt-implantation of nitrogen (LATIN)
- Kilho Lee
- Cheruvu Murthy
- et al.
- 2002
- IEEE Electron Device Letters
A high-speed, high-sensitivity silicon lateral trench photodetector
- Min Yang
- Kern Rim
- et al.
- 2002
- IEEE Electron Device Letters
Measurement of the effect of self-heating in strained-silicon MOSFETs
- Keith A. Jenkins
- K. Rim
- 2002
- IEEE Electron Device Letters