Gas-source molecular beam epitaxial growth, characterization, and light-emitting diode application of InxGa1-xP on GaP(100)
- T.P. Chin
- J.C.P. Chang
- et al.
- 1993
- Applied Physics Letters
Paper
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2351 results at Applied Physics Letters
Low-temperature selective-area deposition of metals: Chemical vapor deposition of gold from ethyl(trimethylphosphine)gold(I)
- M.M. Banaszak Holl
- P.F. Seidler
- et al.
- 1993
- Applied Physics Letters
PaperFemtosecond ellipsometric study of nonequilibrium carrier dynamics in Ge and epitaxial Si1-xGex
- H.R. Choo
- X.F. Hu
- et al.
- 1993
- Applied Physics Letters
PaperImproved process for high-Tc superconducting step-edge junctions
- J.Z. Sun
- W.J. Gallagher
- et al.
- 1993
- Applied Physics Letters
PaperRoom-temperature electron mobility in strained Si/SiGe heterostructures
- S. Nelson
- K. Ismail
- et al.
- 1993
- Applied Physics Letters
PaperColumnar defects in YBa2Cu3O7-δ induced by irradiation with high energy heavy ions
- R. Wheeler
- M.A. Kirk
- et al.
- 1993
- Applied Physics Letters
PaperHeteroepitaxy of β-FeSi2 on unstrained and strained Si(100) surfaces
- D.R. Peale
- R. Haight
- et al.
- 1993
- Applied Physics Letters
PaperCyclotron resonance studies of two-dimensional holes in strained Si 1-xGex/Si quantum wells
- J.-P. Cheng
- V.P. Kesan
- et al.
- 1993
- Applied Physics Letters
PaperMechanism for enhancement of electrical activation of silicon in GaAs by aluminum co-implantation
- J.P. De Souza
- D.K. Sadana
- 1993
- Applied Physics Letters
PaperSystematics of electron mobility in Si/SiGe heterostructures
- S. Nelson
- K. Ismail
- et al.
- 1993
- Applied Physics Letters
Paper