Properties of Ge-doped GaAs and Alx Ga1-xAs, Sn-doped Alx Ga1-xAs and Si-Te-doped GaAs
- K.K. Shih
- G.D. Pettit
- 1974
- Journal of Electronic Materials
Paper
Publications
14469 results for Physical Sciences
Amorphous magnetic materials for bubble domain and magneto-optics application
- J.J. Cuomo
- P. Chaudhari
- et al.
- 1974
- Journal of Electronic Materials
PaperResonant Raman scattering from FeS2 (pyrite)
- R.M. Macfarlane
- S. Ushioda
- et al.
- 1974
- Solid State Communications
PaperSelf-consistent band structure of ordered β-brass
- V.L. Moruzzi
- A.R. Williams
- et al.
- 1974
- Physical Review B
PaperPhotoemission spectroscopy using synchrotron radiation. I. Overviews of valence-band structure for Ge, GaAs, GaP, InSb, ZnSe, CdTe, and Agl
- D.E. Eastman
- W.D. Grobman
- et al.
- 1974
- Physical Review B
PaperX-ray photoemission studies of the alkali halides
- S.P. Kowalczyk
- F.R. McFeely
- et al.
- 1974
- Physical Review B
PaperEvidence for a mobility edge in inversion layers
- Frank Stern
- 1974
- Physical Review B
ReviewExcess microwave ultrasonic attenuation in vacuum-heated rutile (TiO2)
- M. Pomerantz
- 1974
- Physical Review B
ReviewStatic determinaoy in the theory of finite width foil bearings
- W.E. Langlois
- 1974
- Journal of Applied Mechanics, Transactions ASME
PaperInvestigation of metastable states and nucleation in the kinetic Ising model
- K. Binder
- H. Müller-Krumbhaar
- 1974
- Physical Review B
Paper