Finite-element stress analysis of failure mechanisms in a multilevel metallization structure
- L.T. Shi
- K.N. Tu
- 1995
- Journal of Applied Physics
Paper
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2360 results at Journal of Applied Physics
Hydrogen incorporation in silicon nitride films deposited by remote electron-cyclotron-resonance chemical vapor deposition
- David E. Kotecki
- Jonathan D. Chapple-Sokol
- 1995
- Journal of Applied Physics
PaperInterface states induced by the presence of trapped holes near the silicon-silicon-dioxide interface
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- 1995
- Journal of Applied Physics
PaperCharacterizing, modeling, and optimizing high-Tc superconducting quantum interference devices
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- 1995
- Journal of Applied Physics
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- Ted D. Bennett
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- 1995
- Journal of Applied Physics
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- C. Cabral
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- 1995
- Journal of Applied Physics
PaperStudy of end of range loop interactions with B+ implant damage using a boron doped diffusion layer
- J.K. Listebarger
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- 1995
- Journal of Applied Physics
PaperUnderstanding hot-electron transport in silicon devices: Is there a shortcut?
- M.V. Fischetti
- S.E. Laux
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- 1995
- Journal of Applied Physics
PaperRepetition rate effect on the laser ablation of polymer structures
- L. Reyna
- J.R. Soběhart
- 1995
- Journal of Applied Physics
PaperScattering from strain variations in high-mobility Si/SiGe heterostructures
- R.M. Feenstra
- M.A. Lutz
- 1995
- Journal of Applied Physics
Paper