F. Palumbo, S. Lombardo, et al.
IRPS 2004
The activation energy for thermal dissociation of hydrogen from silicon dangling-bond defects (Pb centers) has been measured using both (111)- and (100)-oriented samples. The behavior of each of the three P b varieties [P111b at the (111) interface, P100b0 and P100b1 at the (100) interface] is compared. For P111b, excellent agreement with previous results by Brower [Phys. Rev. B 42, 3444 (1990)] is obtained. The activation energies of the (100)-interface Pb centers are slightly higher, assuming the same vibrational frequency, and, unlike that of P 111b, are affected by a postoxidation anneal. © 1995 American Institute of Physics.
F. Palumbo, S. Lombardo, et al.
IRPS 2004
J.H. Stathis, A. Vayshenker, et al.
VLSI Technology 2000
J.H. Stathis, S. Rigo, et al.
Solid State Communications
B.P. Linder, J.H. Stathis, et al.
IRPS 2001