High-performance dual-gate carbon nanotube FETs with 40-nm gate length
- Yu-Ming Lin
- Joerg Appenzeller
- et al.
- 2005
- IEEE Electron Device Letters
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Improved DC and RF performance in Si/SiGe n-MODFETs with ion-implanted buried p-well doping
- S.J. Koester
- K.L. Saenger
- et al.
- 2005
- IEEE Electron Device Letters
Optimum crystallographic alignment for Si n-channel ballistic DGFETs
- S.E. Laux
- 2005
- IEEE Electron Device Letters
Laterally scaled Si-Si0.7Ge0.3 n-MODFETs with fmax > 200 GHz and low operating bias
- S.J. Koester
- K.L. Saenger
- et al.
- 2005
- IEEE Electron Device Letters
CVD rhenium and PVD tantalum gate MOSFETs fabricated with a replacement technique
- James Pan
- Don Canaperi
- et al.
- 2004
- IEEE Electron Device Letters
High-capacity, self-assembled metal-oxide-semiconductor decoupling capacitors
- Charles T. Black
- Kathryn W. Guarini
- et al.
- 2004
- IEEE Electron Device Letters
Impact of band structure on charge trapping in thin SiO 2/Al 2O 3/poly-Si gate stacks
- L. Pantisano
- L. Lucci
- et al.
- 2004
- IEEE Electron Device Letters
Vertically self-aligned buried junction formation for ultrahigh-density DRAM applications
- J. Beintner
- Y. Li
- et al.
- 2004
- IEEE Electron Device Letters
Time-resolved measurements of self-heating in SOI and strained-silicon MOSFETs using photon emission microscopy
- Stas Polonsky
- Keith A. Jenkins
- 2004
- IEEE Electron Device Letters
Asymmetric Energy Distribution of Interface Traps in n- and p-MOSFETs with HfO2 Gate Dielectric on Ultrathin SiON Buffer Layer
- J.-P. Han
- E.M. Vogel
- et al.
- 2004
- IEEE Electron Device Letters