Analysis and modeling of threshold voltage mismatch for CMOS at 65 nm and beyond
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- Terence B. Hook
- et al.
- 2008
- IEEE Electron Device Letters
Paper
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307 results at IEEE Electron Device Letters
Sb-heterostructure millimeter-wave detectors with reduced capacitance and noise equivalent power
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- R. Rajavel
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- 2008
- IEEE Electron Device Letters
PaperHigh-performance undoped-body 8-nm-thin SOI field-effect transistors
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- et al.
- 2008
- IEEE Electron Device Letters
PaperOutperforming the conventional scaling rules in the quantum-capacitance limit
- J. Knoch
- W. Riess
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- 2008
- IEEE Electron Device Letters
PaperExternally assembled gate-all-around carbon nanotube field-effect transistor
- Zhihong Chen
- Damon Farmer
- et al.
- 2008
- IEEE Electron Device Letters
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- Ku N. Chen
- L. Krusin-Elbaum
- et al.
- 2008
- IEEE Electron Device Letters
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- 2007
- IEEE Electron Device Letters
PaperAmorphous-SiCBN-based metal-semiconductor-metal photodetector for high-temperature applications
- Arun Vijayakumar
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- et al.
- 2007
- IEEE Electron Device Letters
PaperNovel approach to reduce source/drain series and contact resistance in high-performance UTSOI CMOS devices using selective electrodeless CoWP or CoB process
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- Anna Topol
- et al.
- 2007
- IEEE Electron Device Letters
PaperSymmetric vertical parallel plate capacitors for on-chip RF circuits in 65-nm SOI technology
- Daeik Kim
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- et al.
- 2007
- IEEE Electron Device Letters
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