Sb-heterostructure millimeter-wave detectors with reduced capacitance and noise equivalent power
- N. Su
- R. Rajavel
- et al.
- 2008
- IEEE Electron Device Letters
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306 results at IEEE Electron Device Letters
High-performance undoped-body 8-nm-thin SOI field-effect transistors
- Amlan Majumdar
- Zhibin Ren
- et al.
- 2008
- IEEE Electron Device Letters
Outperforming the conventional scaling rules in the quantum-capacitance limit
- J. Knoch
- W. Riess
- et al.
- 2008
- IEEE Electron Device Letters
Externally assembled gate-all-around carbon nanotube field-effect transistor
- Zhihong Chen
- Damon Farmer
- et al.
- 2008
- IEEE Electron Device Letters
Programmable via using indirectly heated phase-change switch for reconfigurable logic applications
- Ku N. Chen
- L. Krusin-Elbaum
- et al.
- 2008
- IEEE Electron Device Letters
Electromigration resistant power delivery systems
- Deepak C. Sekar
- Bing Dang
- et al.
- 2007
- IEEE Electron Device Letters
Novel approach to reduce source/drain series and contact resistance in high-performance UTSOI CMOS devices using selective electrodeless CoWP or CoB process
- James Pan
- Anna Topol
- et al.
- 2007
- IEEE Electron Device Letters
Amorphous-SiCBN-based metal-semiconductor-metal photodetector for high-temperature applications
- Arun Vijayakumar
- Ravi M. Todi
- et al.
- 2007
- IEEE Electron Device Letters
Symmetric vertical parallel plate capacitors for on-chip RF circuits in 65-nm SOI technology
- Daeik Kim
- Jonghae Kim
- et al.
- 2007
- IEEE Electron Device Letters
Manufacturable parasitic-aware circuit-level FETs in 65-nm SOI CMOS technology
- Daeik Kim
- Jonghae Kim
- et al.
- 2007
- IEEE Electron Device Letters