Technique for producing highly planar Si/SiO0.64Ge0.36/Si metal-oxide-semiconductor field effect transistor channels
- T.J. Grasby
- C.P. Parry
- et al.
- 1999
- Applied Physics Letters
Paper
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2351 results at Applied Physics Letters
Charge transfer in photovoltaics consisting of interpenetrating networks of conjugated polymer and TiO2 nanoparticles
- A.C. Arango
- S.A. Carter
- et al.
- 1999
- Applied Physics Letters
PaperNon-Arrhenius temperature dependence of reliability in ultrathin silicon dioxide films
- D.J. DiMaria
- J.H. Stathis
- 1999
- Applied Physics Letters
PaperIncreasing the exchange-bias field of Ni0.5Co0.5O films by microstructural control
- Dinesh Martien
- Kentaro Takano
- et al.
- 1999
- Applied Physics Letters
PaperUltrahigh-density atomic force microscopy data storage with erase capability
- G. Binnig
- M. Despont
- et al.
- 1999
- Applied Physics Letters
PaperObservation of local tilted regions in strain-relaxed SiGe/Si buffer layers using x-ray microdiffraction
- P.M. Mooney
- J.L. Jordan-Sweet
- et al.
- 1999
- Applied Physics Letters
PaperElectrical noise in hysteretic ferromagnet-insulator-ferromagnet tunnel junctions
- E.R. Nowak
- M.B. Weissman
- et al.
- 1999
- Applied Physics Letters
PaperCurrent-induced local oxidation of metal films: Mechanism and quantum-size effects
- Thomas Schmidt
- Richard Martel
- et al.
- 1998
- Applied Physics Letters
PaperSingle- and multi-wall carbon nanotube field-effect transistors
- R. Martel
- T. Schmidt
- et al.
- 1998
- Applied Physics Letters
PaperMagnetoresistance due to domain walls in an epitaxial microfabricated Fe wire
- U. Rüdiger
- J. Yu
- et al.
- 1998
- Applied Physics Letters
Paper