J.H. Stathis
IWGI 2001
Paper
Non-Arrhenius temperature dependence of reliability in ultrathin silicon dioxide films
Abstract
A study was conducted to show that defect generation in ultrathin oxides (≲3.0 nm) operating above 100 °C will be enhanced compared to thicker films. Assumptions of an Arrhenius-type behavior from 25 °C to 200 °C on these ultrathin oxides are not justified and will likely lead to erroneous predictions for oxide reliability.
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