The combined effects of deuterium anneals and deuterated barrier-nitride processing on hot-electron degradation in MOSFET's
- Thomas G. Ference
- Jay S. Burnham
- et al.
- 1999
- IEEE Transactions on Electron Devices
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Electric-field penetration into metals: consequences for high-dielectric-constant capacitors
- Charles T. Black
- Jeffrey J. Welser
- 1999
- IEEE Transactions on Electron Devices
A front-gate charge-pumping method for probing both interfaces in SOI devices
- Yujun Li
- T.P. Ma
- 1998
- IEEE Transactions on Electron Devices
Monitoring hot-carrier degradation in SOI MOSFET's by hot-carrier luminescence techniques
- Luca Selmi
- Maura Pavesi
- et al.
- 1998
- IEEE Transactions on Electron Devices
Measurement of the switching speed of single FET's
- Keith A. Jenkins
- Joachim N. Burghartz
- 1998
- IEEE Transactions on Electron Devices
CMOS active pixel image sensors fabricated using a 1.8-V, 0.25-/spl μ/m CMOS technology
- H. Wong
- R. Chang
- et al.
- 1998
- IEEE Transactions on Electron Devices
Fabrication of ultrathin, highly uniform thin-film soi mosfet's with low series resistance using pattern-constrained epitaxy
- Hon-Sum Wong
- 1997
- IEEE Transactions on Electron Devices
Short-channel effect improved by lateral channel-engineering in deep-submicronmeter MOSFET's
- Bin Yu
- Clement H. J. Wann
- et al.
- 1997
- IEEE Transactions on Electron Devices
Characteristics of SOI FET's under pulsed conditions
- Keith A. Jenkins
- J.Y.-C. Sun
- et al.
- 1997
- IEEE Transactions on Electron Devices
Design of Si/SiGe heterojunction complementary metal-oxide-semiconductor transistors
- A. Sadek
- K. Ismail
- et al.
- 1996
- IEEE Transactions on Electron Devices