Assessment of fully-depleted planar CMOS for low power complex circuit operation
- Zhibin Ren
- S. Mehta
- et al.
- 2011
- IEDM 2011
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123 results for Yu Zhu
The impact of hole-induced electromigration on the cycling endurance of phase change memory
- M. H. Lee
- R. Cheek
- et al.
- 2010
- IEDM 2010
Hysteretic drain-current behavior due to random telegraph noise in scaled-down FETs with high-κ/metal-gate stacks
- Hiroshi Miki
- Naoki Tega
- et al.
- 2010
- IEDM 2010
Challenges and solutions of FinFET integration in an SRAM cell and a logic circuit for 22 nm node and beyond
- H. Kawasaki
- V.S. Basker
- et al.
- 2009
- IEDM 2009
Reduction of random telegraph noise in high-κ / metal-gate stacks for 22 nm generation FETs
- N. Tega
- H. Miki
- et al.
- 2009
- IEDM 2009
Extremely thin SOI (ETSOI) CMOS with record low variability for low power system-on-chip applications
- K. Cheng
- A. Khakifirooz
- et al.
- 2009
- IEDM 2009
Understanding amorphous states of phase-change memory using frenkel-poole model
- Y.H. Shih
- M.H. Lee
- et al.
- 2009
- IEDM 2009
Mechanisms of retention loss in Ge2Sb2Te 5-based phase-change memory
- Y.H. Shih
- J.Y. Wu
- et al.
- 2008
- IEDM 2008
22 nm technology compatible fully functional 0.1 μm 2 6T-sram cell
- B. Haran
- A. Kumar
- et al.
- 2008
- IEDM 2008
Write strategies for 2 and 4-bit multi-level phase-change memory
- T. Nirschl
- J.B. Philipp
- et al.
- 2007
- IEDM 2007