EPR Observation of an Au‐Fe Complex in Silicon: I. Experimental Data
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- 2006
- physica status solidi (b)
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Publications
12 results for J.W. Corbett
Reactive ion etching of SiGe alloys using CF2Cl2
- Ying Zhang
- Gottlieb S. Oehrlein
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- 1992
- Journal of Applied Physics
PaperSelective dry etching of silicon with respect to germanium
- G.S. Oehrlein
- T.D. Bestwick
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- 1990
- Applied Physics Letters
PaperEffects of deuterium plasmas on silicon near-surface properties
- J.L. Lindström
- G.S. Oehrlein
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- 1989
- Journal of Applied Physics
PaperStudy of oxygen addition to CF3Br reactive ion etching plasmas: Effects on silicon surface chemistry and etching behavior
- T.D. Bestwick
- G.S. Oehrlein
- et al.
- 1989
- Applied Physics Letters
PaperA study of the annealing of the 830 cm−1 IR band observed in electron‐irradiated silicon
- J.L. Lindsteöm
- G.S. Oehrlejm
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- 1986
- physica status solidi (a)
PaperOn the Complex of the Oxygen Interstitial and the Silicon Interstitial in Silicon
- J.L. Lindstrom
- B.C. Svensson
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- 1984
- physica status solidi (a)
PaperModels for the Hydrogen‐Related Defect—Impurity Complexes and SiH Infrared Bands in Crystalline Silicon
- T.S. Shi
- S.N. Sahu
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- 1982
- physica status solidi (a)
PaperIon-induced defects in semiconductors
- James W. Corbett
- James P. Karins
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- 1981
- Nuclear Instruments and Methods
PaperA transient capacitance study of radiation‐induced defects in aluminum‐doped silicon
- Y.H. Lee
- K.L. Wang
- et al.
- 1980
- physica status solidi (a)
Paper