STUDY OF SILICON CONTAMINATION AND NEAR-SURFACE DAMAGE CAUSED BY CF//4/H//2 REACTIVE ION ETCHING.
- G.S. Oehrlein
- R.M. Tromp
- et al.
- 1983
- ECS Meeting 1983
Conference paper
Publications
38 results for Y.H. Lee
ETCH ANISOTROPY OF UNDOPED POLYSILICON FILMS.
- D. Favreau
- M. Chen
- et al.
- 1983
- ECS Meeting 1983
Conference paperHEATING EFFECT IN HIGHLY CONDUCTING MATERIALS DURING PLASMA ETCHING.
- Y.H. Lee
- M. Chen
- 1983
- ECS Meeting 1983
Conference paperReactive etching mechanism of tungsten silicide in CF4-O2 plasma
- Young H. Lee
- Mao-Min Chen
- et al.
- 1984
- Thin Solid Films
PaperSilicon etching mechanism and anisotropy in CF4+O2 plasma
- Young H. Lee
- Mao-Min Chen
- 1983
- Journal of Applied Physics
PaperA transient capacitance study of radiation‐induced defects in aluminum‐doped silicon
- Y.H. Lee
- K.L. Wang
- et al.
- 1980
- physica status solidi (a)
PaperHigh‐temperature ion implantation in diamond
- Y.H. Lee
- P.R. Brosious
- et al.
- 1978
- physica status solidi (a)
PaperElectron paramagnetic resonance in diamond implanted at various energies and temperatures
- P.R. Brosious
- Y.H. Lee
- et al.
- 1974
- physica status solidi (a)
Paper