Feature-Size Dependence of Etch Rate in Reactive Ion Etching
- Young H. Lee
- Zhen H. Zhou
- 2019
- JES
Paper
Publications
38 results for Y.H. Lee
Near-Surface Damage and Contamination after CF4/H2 Reactive Ion Etching of Si
- G.S. Oehrlein
- R.M. Tromp
- et al.
- 2019
- JES
PaperSelective Wet and Dry Etching of Hydrogenated Amorphous Silicon and Related Materials
- I. Haller
- Y.H. Lee
- et al.
- 2019
- JES
PaperEPR Observation of an Au‐Fe Complex in Silicon: I. Experimental Data
- R.L. Kleinhenz
- Y.H. Lee
- et al.
- 2006
- physica status solidi (b)
PaperStudy of near‐surface disorder and surface residues after reactive Ion etching of Silicon
- G.S. Oehrlein
- G.J. Coyle
- et al.
- 2004
- Surface and Interface Analysis
PaperSilicon di-interstitial in ion-implanted silicon
- Young Hoon Lee
- 1998
- Applied Physics Letters
PaperA role of energetic ions in RF-biased PECVD of TiO2
- Young Hoon Lee
- 1998
- Vacuum
PaperHigh-performance 0.07-μm CMOS with 9.5-ps gate delay and 150 GHz fT
- Clement Wann
- Fariborz Assaderaghi
- et al.
- 1997
- IEEE Electron Device Letters
PaperRoom temperature operation of a quantum-dot flash memory
- J.J. Welser
- Sandip Tiwari
- et al.
- 1997
- IEEE Electron Device Letters
PaperUltra-thin, highly uniform thin film SOI MOSFET with low series resistance using pattern-constrained epitaxy (PACE)
- H.-S. Wong
- K.K. Chan
- et al.
- 1996
- VLSI Technology 1996
Conference paper