Properties of AI2O3 Films Deposited from the AICI3, CO2, and H2 SystemV.J. SilvestriC.M. Osburnet al.2019JESPaper
Use of electron-trapping region to reduce leakage currents and improve breakdown characteristics of MOS structuresD.J. DimariaD.R. Younget al.2008Applied Physics LettersPaper
The Effect of Silicon Wafer Imperfections on Minority Carrier Generation and Dielectric Breakdown in MOS StructuresC.M. OsburnD.W. Ormond1974JESPaper
Sodium-Induced Barrier-Height Lowering and Dielectric Breakdown on SiO2 Films on SiliconC.M. OsburnD.W. Ormond1974JESPaper