Charge trapping at the low- k dielectric-silicon interface probed by the conductance and capacitance techniques
- J.M. Atkin
- E. Cartier
- et al.
- 2008
- Applied Physics Letters
Paper
Publications
138 results for Robert B. Laibowitz
Dependence of the Si-SiO2 barrier height on SiO2 thickness in MOS tunnel structures
- L. Kasprzak
- R.B. Laibowitz
- et al.
- 2008
- Journal of Applied Physics
PaperJosephson effect in Nb nanobridges
- R.B. Laibowitz
- A.N. Broers
- et al.
- 2008
- Applied Physics Letters
PaperA study of amorphous superconducting transition metal-metalloid alloys produced by coevaporation
- W.L. Johnson
- C.C. Tsuei
- et al.
- 2008
- Journal of Applied Physics
PaperNiobium nanobridge dc SQUID
- Richard F. Voss
- Robert B. Laibowitz
- et al.
- 2008
- Applied Physics Letters
PaperAll-Nb low-noise dc SQUID with 1-μm tunnel junctions
- Richard F. Voss
- Robert B. Laibowitz
- et al.
- 2008
- Journal of Applied Physics
PaperPhotocurrent spectroscopy of low- k dielectric materials: Barrier heights and trap densities
- J.M. Atkin
- D. Song
- et al.
- 2008
- Journal of Applied Physics
PaperEfficient waveguide-integrated tunnel junction detectors at 1.6 μm
- Philip C. D. Hobbs
- Robert B. Laibowitz
- et al.
- 2007
- Optics Express
PaperCoherent electron scattering in mesoscopic metal films
- C. Haesendonck
- Y. Bruynseraede
- et al.
- 2007
- Physica Scripta
PaperStructural transformations as observed by transmission electron microscopy during electrical switching in amorphous Ge–Te
- R.B. Laibowitz
- S.R. Heed
- et al.
- 2006
- Philosophical Magazine
Paper